Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al<sub>2</sub>O<sub>3</sub>/n-ZnO Heterostructures
نویسندگان
چکیده
Heterojunction p-GaN/n-ZnO light emitting diode (LED) structure using Eu-doped ZnO (ZnO:Eu) as an active component is demonstrated in order to realize low-cost and environmentally-friendly red LEDs with sharp linewidth temperature stability against surrounding environment including operating injection current. Chemically stable Al 2 O 3 inserted electron blocking layer between p-GaN ZnO:Eu/n-ZnO facilitate the of carriers into ZnO:Eu layer. insertion a moderate thickness (∼10 nm) facilitates carrier recombination at comparatively low resistivity. Device characteristics p-GaN/Al /ZnO:Eu/n-ZnO LED structures show luminescence under current reversed bias voltage originated from Eu 3+ ions host. Detailed optical utilizing combined excitation emission spectroscopy measurement enable identification centers contributing both indirect collisional excitation. The center via host different that excitation, which would pave way understand mechanism ZnO:Eu, hence high-brightness based on rare-Earth doped component.
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2023
ISSN: ['2162-8769', '2162-8777']
DOI: https://doi.org/10.1149/2162-8777/ace655